Isigaba sobushushu esisezantsi se-barium metaborate (β-BaB₂O₄, BBO ngokufutshane) ikristale yeyenkqubo yekristale yesithathu, 3m iqela lamanqaku. Ngowe-1949, uLevinokqhubekayo. yafumanisa inqanaba lobushushu obuphantsi barium metaborate BaB₂O₄ ikhompawundi. Ngowe-1968, uBrixnerokqhubekayo. sebenzisa iBaCl₂ njengokuguquguquka ukufumana inaliti ecacileyo njengekristale enye. Ngowe-1969, uHubner wasebenzisa uLi₂O njengoko i-flux ikhula i-0.5mm × 0.5mm × 0.5mm kwaye ilinganise idatha esisiseko yoxinaniso, iiparamitha zeeseli kunye neqela lendawo. Emva kowe-1982, iFujian Institute of Matter Structure, iAkhademi yaseTshayina yeSayensi yasebenzisa indlela etyhidiweyo yetyuwa yekristale yokukhulisa ikristale enye ekuguquguqukeni, kwaye yafumanisa ukuba ikristale ye-BBO yeyona nto ibalaseleyo ye-ultraviolet frequency-double material. Kwisicelo se-electro-optic Q-switching, ikristale ye-BBO inesithintelo somlinganiso ophantsi we-electro-optic okhokelela kumbane ophezulu wesiqingatha samaza, kodwa inenzuzo ebalaseleyo yomonakalo ophakamileyo welaser.

I-Fujian Institute of Matter Structure, i-Academy yaseShayina yeSayensi iye yaqhuba uluhlu lomsebenzi ekukhuleni kweekristale ze-BBO. Kwi-1985, i-crystal eyodwa kunye nobukhulu be-φ67mm × 14mm yakhuliswa. Ubungakanani bekristale bufikelele kwi-φ76mm×15mm kwi-1986 kunye ne-φ120mm×23mm kwi-1988.

Ukukhula kweekristale ngaphezu kwazo zonke kwamkela indlela ye-crystal yetyuwa etyhidiweyo (ekwaziwa ngokuba yi-top-seed-crystal method, indlela yokunyusa i-flux, njl.). Izinga lokukhula kwekristale kwic-i-axis direction iyacotha, kwaye kunzima ukufumana icrystal ende ekumgangatho ophezulu. Ngaphezu koko, i-electro-optic coefficient ye-BBO crystal incinci, kwaye i-crystal emfutshane ithetha ukuba i-voltage ephezulu yokusebenza iyafuneka. Ngowe-1995, uGoodnookqhubekayo. isetyenziswe i-BBO njengento ye-electro-optic ye-EO Q-modulation ye-Nd: YLF laser. Ubungakanani bale BBO crystal yayiyi-3mm×3mm×15mm(x, y, z), kunye nokumodareyitha okunqamlezileyo kwamkelwa. Nangona ubude bobude bobude bale BBO bufikelela kwi-5: 1, i-voltage yekota-wave isafikelela kwi-4.6 kV, malunga namaxesha e-5 ye-EO Q-modulation ye-crystal ye-LN phantsi kweemeko ezifanayo.

Ukuze kuncitshiswe i-voltage yokusebenza, i-BBO EO Q-switch isebenzisa iikristale ezimbini okanye ezintathu kunye, okwandisa ilahleko yokufaka kunye neendleko. Nickelokqhubekayo. yehlisa i-half-wave voltage ye-BBO crystal ngokwenza ukukhanya kudlule kwikristale amaxesha amaninzi. Njengoko kuboniswe kumzobo, i-laser beam idlula i-crystal ngamaxesha amane, kwaye ukulibaziseka kwesigaba okubangelwa isibuko esiphezulu sokubonakalisa esibekwe kwi-45 ° sihlawulwe yi-wave-plate ebekwe kwindlela ye-optical. Ngale ndlela, i-voltage ye-half-wave ye-BBO Q-switch ingaba ngaphantsi kwe-3.6 kV.

Umzobo 1. I-BBO EO Q-modulation kunye ne-low half-wave voltage - WISOPTIC

Ngo-2011 Perlov okqhubekayo. isebenzise i-NaF njenge-flux yokukhulisa ikristale ye-BBO kunye nobude be-50mm ngaphakathic-i-axis direction, kwaye ifunyenwe isixhobo se-BBO EO ngobukhulu be-5mm×5mm×40mm, kunye nokufana okubonakalayo okungcono kune-1×10⁻⁶ i-CM⁻¹, ehlangabezana neemfuno ze-EO Q-switching izicelo. Nangona kunjalo, umjikelo wokukhula wale ndlela ungaphezulu kweenyanga ezi-2, kwaye iindleko zisephezulu.

Okwangoku, i-coefficient ephantsi ye-EO ye-BBO crystal kunye nobunzima bokukhulisa i-BBO enobungakanani obukhulu kunye nomgangatho ophezulu usathintela isicelo se-BBO's EO Q-switching. Nangona kunjalo, ngenxa yomonakalo ophezulu we-laser threshold kunye nokukwazi ukusebenza ngokuphindaphindiweyo okuphindaphindiweyo, i-crystal ye-BBO iseluhlobo lwe-EO Q-modulation material enexabiso elibalulekileyo kunye nekamva elithembisayo.

Umzobo 2. I-BBO EO Q-Shintsha nge-voltage ephantsi yesiqingatha-eyenziwe yi-WISOPTIC Technology Co., Ltd.